Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide

T. Ohguro*, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

42 Scopus citations


A nitrogen-doped NiSi technique has been developed for deep submicron CMOS. It was found that the nitrogen suppresses oxidation of the silicide film, resulting in significantly reduced roughness at the interface between silicide and the Si substrate. It was confirmed that, as a consequence, the leakage current through the silicided ultra-shallow diffused layer was significantly suppressed. The nitrogen-doped NiSi film has the advantage of containing large single crystal grains, and this reduces the resistivity of the film. The nitrogen-doped NiSi technique was used to fabricate 0.15 μm CMOS devices, and these devices, both n- and p-MOSFETs, exhibited very high Id and gm values without leakage current.

Original languageEnglish
Pages (from-to)453-456
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 10 Dec 199513 Dec 1995

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