Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

GongTan Li, Bo-Ru Yang*, Chuan Liu*, Chia-Yu Lee, Yuan-Chun Wu, Po-Yen Lu, Shaozhi Deng, Han-Ping Shieh, Ningsheng Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.
Original languageEnglish
Pages (from-to)607-610
JournalIeee Electron Device Letters
Volume37
Issue number5
DOIs
StatePublished - May 2016

Keywords

  • InZnSnO; thin-film transistors; NGBS; nitrogen doping

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