Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

GongTan Li; Bo-Ru Yang; Chuan Liu; Chia-Yu Lee; Yuan-Chun Wu; Po-Yen Lu; Shaozhi Deng; Han-Ping Shieh; Ningsheng Xu

doi:10.1109/LED.2016.2548020

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

GongTan Li, Bo-Ru Yang^*, Chuan Liu^*, Chia-Yu Lee, Yuan-Chun Wu, Po-Yen Lu, Shaozhi Deng, Han-Ping Shieh, Ningsheng Xu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

Original language	English
Pages (from-to)	607-610
Journal	Ieee Electron Device Letters
Volume	37
Issue number	5
DOIs	https://doi.org/10.1109/LED.2016.2548020
State	Published - May 2016

Keywords

InZnSnO; thin-film transistors; NGBS; nitrogen doping

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title = "Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations",

abstract = "The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.",

keywords = "InZnSnO; thin-film transistors; NGBS; nitrogen doping",

author = "GongTan Li and Bo-Ru Yang and Chuan Liu and Chia-Yu Lee and Yuan-Chun Wu and Po-Yen Lu and Shaozhi Deng and Han-Ping Shieh and Ningsheng Xu",

year = "2016",

month = may,

doi = "10.1109/LED.2016.2548020",

language = "English",

volume = "37",

pages = "607--610",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations. / Li, GongTan; Yang, Bo-Ru; Liu, Chuan; Lee, Chia-Yu; Wu, Yuan-Chun; Lu, Po-Yen; Deng, Shaozhi; Shieh, Han-Ping; Xu, Ningsheng.

In: Ieee Electron Device Letters, Vol. 37, No. 5, 05.2016, p. 607-610.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

AU - Li, GongTan

AU - Yang, Bo-Ru

AU - Liu, Chuan

AU - Lee, Chia-Yu

AU - Wu, Yuan-Chun

AU - Lu, Po-Yen

AU - Deng, Shaozhi

AU - Shieh, Han-Ping

AU - Xu, Ningsheng

PY - 2016/5

Y1 - 2016/5

N2 - The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

AB - The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

KW - InZnSnO; thin-film transistors; NGBS; nitrogen doping

U2 - 10.1109/LED.2016.2548020

DO - 10.1109/LED.2016.2548020

M3 - Article

VL - 37

SP - 607

EP - 610

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

ER -