Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

Minsoo Lee*, Dolf Landheer, Xiaohua Wu, Martin Couillard, Zhenghong Lu, Wai T. Ng, Jianhao Chen, Tien-Sheng Chao, Tanfu Lei

*Corresponding author for this work

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy