Nitridization of the stacked poly-si gate to suppress the boron penetration in pMOS

Yung Lin Hao*, Chao Sung Lai, Chung Lee Lcn, Tan Fu Lei, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

NH3 -nitridation to create nitrogen-rich layers inbetween the stacked layers of the poly-Si gate for pMOS application is proposed and demonstrated. Due to the blocking of fluorine diffusion in the poly-Si gate by the nitrogen-rich layers, the amount of fluorine in the gate oxide, consequently, the fluorine enhancement on boron penetration is reduced. The negative effects of the NH3 -nitridized oxide were not found in this work. Moreover, this nitridized stacked poly-Si gate improves significantly the electrical characteristics of the gate oxide as a result of the indirect and slight nitridation at the gate oxide.

Original languageEnglish
Pages (from-to)1161-1165
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume43
Issue number7
DOIs
StatePublished - 1 Dec 1996

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