In this letter, the nitride-based thin-film light-emitting diodes (TFLEDs) with eight-fold photonic quasi-crystal (PQC) surfaces are proposed and demonstrated by a combination of wafer bonding, laser lift-off, and electron-beam lithography processes. By adopting a PQC surface, the light-output power (at 350 mA) of the PQC-TFLEDs exhibits 140% output power enhancement as compared with that of TFLEDs without a PQC surface.
- Electron-beam lithography
- Laser lift-off (LLO)
- Photonic quasi-crystal (PQC)
- Thin-film light-emitting diodes (TFLEDs)
- Wafer bonding