Nitride-based near-ultraviolet mesh MQW light-emitting diodes

Cheng-Huang Kuo*, H. C. Feng

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while output powers were 7.5, 9.0, and 11.3 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED, and mesh MQW LED, respectively. The larger LED output power is attributed to the increased light extraction efficiency.

Original languageEnglish
Pages (from-to)1901-1903
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number23
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Gallium nitride
  • Indium-tin-oxide (ITO)
  • Light emitting diodes
  • Light-emitting diode (LED)
  • Meshed light-emitting diode (LED)
  • Output power
  • Power generation

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