Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Cheng-Huang Kuo*, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.

Original languageEnglish
Article number142115
JournalApplied Physics Letters
Volume90
Issue number14
DOIs
StatePublished - 13 Apr 2007

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    Kuo, C-H., Feng, H. C., Kuo, C. W., Chen, C. M., Wu, L. W., & Chi, G. C. (2007). Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN. Applied Physics Letters, 90(14), [142115]. https://doi.org/10.1063/1.2720347