Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

Cheng-Huang Kuo*, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu, J. M. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

Original languageEnglish
Pages (from-to)535-537
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - 1 Feb 2003


  • Hall measurement
  • InGaN/GaN
  • LED
  • SPS
  • Tunneling contact

Fingerprint Dive into the research topics of 'Nitride-based light emitting diodes with Si-doped In<sub>0.23</sub>Ga<sub>0.77</sub>N/GaN short period superlattice tunneling contact layer'. Together they form a unique fingerprint.

Cite this