Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

Cheng-Huang Kuo, S. J. Chang*, G. C. Chi, K. T. Lam, Y. S. Sun

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original languageEnglish
Pages (from-to)2153-2155
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 31 Jul 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 28 Aug 20052 Sep 2005

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