Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

C. W. Kuo*, C. M. Chen, Cheng-Huang Kuo, G. C. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output intensity from the LED with 820°C p-AlInGaN cap layer without increasing the LED operation voltage.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices II
DOIs
StatePublished - 24 May 2007
EventGallium Nitride Materials and Devices II - San Jose, CA, United States
Duration: 22 Jan 200725 Jan 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6473
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices II
CountryUnited States
CitySan Jose, CA
Period22/01/0725/01/07

Keywords

  • InGaN/GaN
  • LED
  • V-shap pits
  • p-AlInGaN

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