Nitride-based LEDs with nano-scale textured sidewalls using natural lithography

Hung Wen Huang, Hao-Chung Kuo*, J. T. Chu, C. F. Lai, C. C. Kao, Tien-chang Lu, S. C. Wang, R. J. Tsai, C. C. Yu, C. F. Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-scale textured sidewalls. The LED with textured sidewalls increased the output power of the InGaN-GaN multiple quantum well (MQW) LEDs by a factor of 1.3, indicating that the LED with nano-scale textured sidewalls had larger light extraction efficiency. The wall-plug efficiency of nitride-based LEDs was increased by 30% using textured sidewalls.

Original languageEnglish
Article number030
Pages (from-to)2998-3001
Number of pages4
JournalNanotechnology
Volume17
Issue number12
DOIs
StatePublished - 28 Jun 2006

Fingerprint Dive into the research topics of 'Nitride-based LEDs with nano-scale textured sidewalls using natural lithography'. Together they form a unique fingerprint.

  • Cite this

    Huang, H. W., Kuo, H-C., Chu, J. T., Lai, C. F., Kao, C. C., Lu, T., Wang, S. C., Tsai, R. J., Yu, C. C., & Lin, C. F. (2006). Nitride-based LEDs with nano-scale textured sidewalls using natural lithography. Nanotechnology, 17(12), 2998-3001. [030]. https://doi.org/10.1088/0957-4484/17/12/030