Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

S. J. Chang*, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, Cheng-Huang Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10-3 Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.

Original languageEnglish
Pages (from-to)1002-1004
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number4
DOIs
StatePublished - 1 Apr 2004

Keywords

  • GaN
  • Indium-tin-oxide (ITO)
  • Light-emitting diode (LED)
  • Short-period superlattice (SPS)

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