Nitride-based cascade near white light-emitting diodes

C. H. Chen*, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, Cheng-Huang Kuo, Y. C. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1 × 2.1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with commission international de l'Eclairage color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 lm/W, and 9000 K, respectively.

Original languageEnglish
Pages (from-to)908-910
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number7
DOIs
StatePublished - 1 Jul 2002

Keywords

  • Cascade
  • EL
  • GaN
  • MQW
  • PL
  • White LED

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