Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers

Y. K. Fu, Cheng-Huang Kuo*, C. J. Tun, L. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

GaN epitaxial layers and nitride-based light-emitting diodes (LEDs) structures with a conventional single low-temperature (LT) GaN buffer layer and multiple MgxNy/GaN buffer layers were prepared by metalorganic chemical vapor deposition. It was found that crystal quality of the GaN epilayer prepared on multiple MgxNy/GaN buffer layers was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the multiple MgxNy/GaN buffer layers, it was also found that 20 mA LED output power can be enhanced by 12%, as compared to the conventional LED. Such an enhancement in output power could be attributed to the reduction of threading dislocation induced nonradiative recombination centers using 12-pairs MgxNy/GaN buffer layers. Crown

Original languageEnglish
Pages (from-to)590-594
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • Dislocation
  • Light-emitting diodes
  • Metalorganic chemical vapor deposition
  • Multiple MgN-GaN buffer layers
  • Nitride

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