Nitric acid oxidized ZrO2 as the tunneling oxide of cobalt silicide nanocrystal memory devices

Chih Wei Hu*, Ting Chang Chang, Chun Hao Tu, Yang Dong Chen, Chao Cheng Lin, Min Chen Chen, Jian Yang Lin, Simon M. Sze, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this study, ZrO2 formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO3:H2O 1:10) for 60 s at room temperature. The quality of the formed ZrO2 was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi2 thin film was deposited on the nitric acid oxidized ZrO2 as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi2 nanocrystal memory devices have also been demonstrated and discussed.

Original languageEnglish
Article number5668508
Pages (from-to)1031-1035
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number5
DOIs
StatePublished - 1 Sep 2011

Keywords

  • Cobalt silicide
  • nanocrystal
  • nitric acid oxidation
  • nonvolatile memory
  • ZrO

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