NiSiGe nanocrystals for nonvolatile memory devices

Chih Wei Hu*, Ting Chang Chang, Chun Hao Tu, Cheng Neng Chiang, Chao Cheng Lin, Simon M. Sze, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.

Original languageEnglish
Article number062102
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - 23 Feb 2009

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