Ni/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties

Ting Kai Huang, Jui Yuan Chen, Yi Hsin Ting, Wen-Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Resistive random-access memory (ReRAM) is one of the most promising types of nonvolatile memory because it has several important advantages, for example, a simple metal-insulator-metal structure, fast operating speed, high endurance, high retention, and low energy consumption. However, the reliability of ReRAM nanodevices is not persistent, and the complete switching mechanism is not fully understood. In this study, a unique 1D Ni/NiO/HfO2 core/multishell ReRAM nanodevice is designed and fabricated. The different properties, including the electrical characteristics, surface morphology, and elemental distribution, are systematically investigated. The Ni/NiO/HfO2 heterostructure nanowire ReRAM device exhibits excellent electrical characteristics and resistive switching properties. It is remarkable that the endurance could be maintained up to 200 cycles, which is extremely good for a 1D ReRAM device. Additionally, a focused-ion beam technique is used to prepare samples for subsequent transmission electron microscopic (TEM) observation. From the TEM analysis, the position of the conducting filaments is verified and the elemental composition of the conducting filaments is confirmed. The migration of hafnium ions forms the conducting filaments between the HfO2 layer and Ni core, resulting in the switching characteristic. The study enriches the understanding of the mechanism and provides a design to enhance the resistive switching properties of ReRAM nanodevices.

Original languageEnglish
Article number1800256
JournalAdvanced Electronic Materials
Issue number11
StatePublished - 1 Nov 2018


  • 1D ReRAM devices
  • conducting filaments
  • core/multishell nanowire heterostructures
  • reliability
  • resistive random access memory

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