Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou*, C. H. Cheng, Z. W. Zheng, Ming Liu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

Original languageEnglish
Article number6471736
Pages (from-to)505-507
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
StatePublished - 11 Mar 2013

Keywords

  • Flexible electronics
  • GeO
  • resistive random access memory (RRAM)
  • TiO

Fingerprint Dive into the research topics of 'Ni/GeO<sub>x</sub>/TiO<sub>y</sub>/TaN RRAM on flexible substrate with excellent resistance distribution'. Together they form a unique fingerprint.

Cite this