Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application

F. M. Yang, T. C. Chang*, Po-Tsun Liu, Y. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry.

Original languageEnglish
Pages (from-to)360-363
Number of pages4
JournalThin Solid Films
Issue number2-4
StatePublished - 3 Dec 2007


  • HfO
  • Nanocrystals
  • Nonvolatile memory

Fingerprint Dive into the research topics of 'Nickel silicide nanocrystals embedded in SiO<sub>2</sub> and HfO<sub>2</sub> for nonvolatile memory application'. Together they form a unique fingerprint.

Cite this