Nickel nanocrystals with Hf O2 blocking oxide for nonvolatile memory application

F. M. Yang*, T. C. Chang, Po-Tsun Liu, U. S. Chen, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

*Corresponding author for this work

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Abstract

A distributed charge storage with Ni nanocrystals embedded in the Si O2 and Hf O2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9× 1012 cm2, respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 106 write/erase cycles.

Original languageEnglish
Article number222104
JournalApplied Physics Letters
Volume90
Issue number22
DOIs
StatePublished - 11 Jun 2007

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    Yang, F. M., Chang, T. C., Liu, P-T., Chen, U. S., Yeh, P. H., Yu, Y. C., Lin, J. Y., Sze, S. M., & Lou, J. C. (2007). Nickel nanocrystals with Hf O2 blocking oxide for nonvolatile memory application. Applied Physics Letters, 90(22), [222104]. https://doi.org/10.1063/1.2743926