Ni silicidation on Heavily Doped Si Substrates

Parhat Ahmet*, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ni silicide films were formed on both heavily doped n+ and p+ Si substrates at various temperatures ranged from 200°C to 950°C and its electrical and structural properties were studied. It was found that the phase transition temperature from NiSi phase to NiSi2 phase depend on substrate types; 900°C for NiSi film on n+ Si substrate and 750°C for NiSi film on p+ Si substrate, respectively. It was also found that agglomerations of Ni silicide films on n+ Si substrates begin to occur at the annealing temperatures around 600°C while there is no agglomeration observed in Ni silicide films on p+ Si substrates up to 700°C. Obtained results show that the agglomeration is especially important factor in the process temperature dependency of the sheet resistance of Ni silicides formed on n+ Si substrates. It was also demonstrated that the agglomeration can be suppressed by an inserted thin Boron layer at the interface of Ni/Si.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1304-1307
Number of pages4
DOIs
StatePublished - 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 20 Oct 200823 Oct 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Conference

Conference2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period20/10/0823/10/08

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