Ni implantation-induced enhancement of the crystallisation of amorphous Si

Young Woo Ok, Tae Yeon Seong*, Chel Jong Choi, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.

Original languageEnglish
Pages (from-to)979-985
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Issue number12
StatePublished - 1 Dec 2006

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