NH 3 plasma treatment for flash memory on poly-Si thin films

Yu Hsien Lin*, Hsin Chiang You, Jay Chi Chou, Tung Huan Chou, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we fabricated the poly-Si-Voxide-Vnitride-Voxide-Vsilicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.

Original languageEnglish
Title of host publicationProceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012
Pages825-828
Number of pages4
DOIs
StatePublished - 30 Jul 2012
Event2012 International Symposium on Computer, Consumer and Control, IS3C 2012 - Taichung, Taiwan
Duration: 4 Jun 20126 Jun 2012

Publication series

NameProceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012

Conference

Conference2012 International Symposium on Computer, Consumer and Control, IS3C 2012
CountryTaiwan
CityTaichung
Period4/06/126/06/12

Keywords

  • Flash memories
  • NH3 Plasma
  • poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories
  • Polycrystalline-silicon thin-film transistor (poly-Si-TFT)

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