@inproceedings{935215697f72471693b448b0532919d4,
title = "New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics",
abstract = "This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 105 cycles W/E operation is more than 10 times longer in comparison with the conventional method.",
author = "T. Endoh and H. Iizuka and S. Aritome and Riichiro Shirota and F. Masuoka",
year = "1992",
month = jan,
day = "1",
doi = "10.1109/IEDM.1992.307433",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "603--606",
booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",
address = "United States",
note = "null ; Conference date: 13-12-1992 Through 16-12-1992",
}