New understanding of Metal-Insulator-Metal (MIM) capacitor degradation behavior

Chi Chao Hung*, Anthony S. Oates, Horng-Chih Lin, Percy Chang, J. L. Wang, Huang-Chung Cheng, Y. W. Yau

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.

Original languageEnglish
Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages630-631
Number of pages2
DOIs
StatePublished - 25 Sep 2007
Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
Duration: 15 Apr 200719 Apr 2007

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

Conference45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
CountryUnited States
CityPhoenix, AZ
Period15/04/0719/04/07

Keywords

  • Capacitance degradation
  • Charge trapping
  • Metal-insulator interlayer © 2007 ieee
  • MIM capacitor

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