NEW ULTRA HIGH DENSITY EPROM AND FLASH EEPROM WITH NAND STRUCTURE CELL.

Fujio Masuoka*, Masaki Momodomi, Yoshihisa Iwata, Shirota Riichiro

*Corresponding author for this work

Research output: Contribution to journalConference article

126 Scopus citations

Abstract

A structure is proposed that makes it possible to shrink cell size without scaling of device dimensions. The NAND structure cell realizes a cell as small as 6. 43 mu m**2 using a 1. 0- mu m design rule. As a result, cell area per bit can be reduced by 30% compared with that of a 4-Mb EPROM using the conventional structure and the same design rule. It is found that each bit in a NAND cell is able to be programmed selectively. This high-performance NAND-structure cell is applicable to high-density nonvolatile memories as large as 8 Mb.

Original languageEnglish
Pages (from-to)552-555
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1987

Fingerprint Dive into the research topics of 'NEW ULTRA HIGH DENSITY EPROM AND FLASH EEPROM WITH NAND STRUCTURE CELL.'. Together they form a unique fingerprint.

  • Cite this