New Ti-SALICIDE process using Sb and Ge preamorphization for sub-0.2 μm CMOS technology

Qiuxia Xu*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

A new process for thin titanium self-aligned suicide (Ti-SALICIDE) on narrow n+ poly-Si lines and n+ diffusion layers using preamorphization implantation (PAI) with heavy ions of antimony (Sb) and germanium (Ge) has been demonstrated for application to 0.2-im CMOS devices and beyond. Preamorphization enhances the phase transformation from 49 TU Si to C54TISI2 and lowers the transformation temperature by 80 °C so that it occurs before conglomeration in narrow lines. Preamorphization by Sb and Ge implantation yields better results than that by As. The sheet resistance of TISI2 on heavily As doped poly-Si lines are 3.7 II/D and 3.8 II/D for the samples preamorphized by Ge and Sb implantations even with line width down to 0.2 fim. There is less leakage in the Ti-SALICIDE diode with preamorphization than without it. The probable reasons and mechanisms are discussed. Index Terms- MOSFET's, semiconductor device fabrication, semiconductor device ion implantation, silicon compounds.

Original languageEnglish
Pages (from-to)2002-2009
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume45
Issue number9
DOIs
StatePublished - 1 Dec 1998

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