New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO2 and la2O 3 dielectric interfaces

Kenji Shiraishi; Takashi Nakayama; Yasushi Akasaka; Seiichi Miyazaki; Takashi Nakaoka; Kenji Ohmori; Parhat Ahmet; Kazuyoshi Torii; Heiji Watanabe; Toyohiro Chikyow; Yasuo Nara; Hiroshi Iwai; Keisaku Yamada

New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces

Kenji Shiraishi^*, Takashi Nakayama, Yasushi Akasaka, Seiichi Miyazaki, Takashi Nakaoka, Kenji Ohmori, Parhat Ahmet, Kazuyoshi Torii, Heiji Watanabe, Toyohiro Chikyow, Yasuo Nara, Hiroshi Iwai, Keisaku Yamada

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We have constructed a universal theory of the work functions at metal/high-k HfO₂ and La₂O₃ dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-band-edge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La₂O₃ based on this new concept. Copyright The Electrochemical Society.

Original language	English
Title of host publication	Dielectrics for Nanosystems II
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	25-40
Number of pages	16
Edition	1
State	Published - 2006
Event	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States Duration: 7 May 2006 → 12 May 2006

Publication series

Name	ECS Transactions
Number	1
Volume	2
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country	United States
City	Denver, CO
Period	7/05/06 → 12/05/06

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Shiraishi, K., Nakayama, T., Akasaka, Y., Miyazaki, S., Nakaoka, T., Ohmori, K., Ahmet, P., Torii, K., Watanabe, H., Chikyow, T., Nara, Y., Iwai, H., & Yamada, K. (2006). New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 ed., pp. 25-40). (ECS Transactions; Vol. 2, No. 1).

Shiraishi, Kenji ; Nakayama, Takashi ; Akasaka, Yasushi ; Miyazaki, Seiichi ; Nakaoka, Takashi ; Ohmori, Kenji ; Ahmet, Parhat ; Torii, Kazuyoshi ; Watanabe, Heiji ; Chikyow, Toyohiro ; Nara, Yasuo ; Iwai, Hiroshi ; Yamada, Keisaku. / New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1. ed. 2006. pp. 25-40 (ECS Transactions; 1).

@inproceedings{3bd917e1bcce4633bebd8c54ae0b4b2f,

title = "New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO2 and la2O 3 dielectric interfaces",

abstract = "We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-band-edge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept. Copyright The Electrochemical Society.",

author = "Kenji Shiraishi and Takashi Nakayama and Yasushi Akasaka and Seiichi Miyazaki and Takashi Nakaoka and Kenji Ohmori and Parhat Ahmet and Kazuyoshi Torii and Heiji Watanabe and Toyohiro Chikyow and Yasuo Nara and Hiroshi Iwai and Keisaku Yamada",

year = "2006",

language = "English",

isbn = "1566774381",

series = "ECS Transactions",

number = "1",

pages = "25--40",

booktitle = "Dielectrics for Nanosystems II",

edition = "1",

note = "null ; Conference date: 07-05-2006 Through 12-05-2006",

}

Shiraishi, K, Nakayama, T, Akasaka, Y, Miyazaki, S, Nakaoka, T, Ohmori, K, Ahmet, P, Torii, K, Watanabe, H, Chikyow, T, Nara, Y, Iwai, H & Yamada, K 2006, New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. in Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 edn, ECS Transactions, no. 1, vol. 2, pp. 25-40, 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 7/05/06.

New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. / Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku.

Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1. ed. 2006. p. 25-40 (ECS Transactions; Vol. 2, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO2 and la2O 3 dielectric interfaces

AU - Shiraishi, Kenji

AU - Nakayama, Takashi

AU - Akasaka, Yasushi

AU - Miyazaki, Seiichi

AU - Nakaoka, Takashi

AU - Ohmori, Kenji

AU - Ahmet, Parhat

AU - Torii, Kazuyoshi

AU - Watanabe, Heiji

AU - Chikyow, Toyohiro

AU - Nara, Yasuo

AU - Iwai, Hiroshi

AU - Yamada, Keisaku

PY - 2006

Y1 - 2006

N2 - We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-band-edge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept. Copyright The Electrochemical Society.

AB - We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-band-edge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept. Copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33745451160&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33745451160

SN - 1566774381

SN - 9781566774383

T3 - ECS Transactions

SP - 25

EP - 40

BT - Dielectrics for Nanosystems II

Y2 - 7 May 2006 through 12 May 2006

ER -

New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces

Abstract

Publication series

Conference

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