New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Ming Chu King; Albert Chin

doi:10.1109/TSM.2008.2000267

New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Ming Chu King^*, Albert Chin

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.

Original language	English
Article number	4512068
Pages (from-to)	244-247
Number of pages	4
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	21
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2008.2000267
State	Published - 1 May 2008

Keywords

Contact
Gate
Leakage current
Test structure

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AB - The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.

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KW - Gate

KW - Leakage current

KW - Test structure

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New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Abstract

Keywords

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