Abstract
The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.
| Original language | English |
|---|---|
| Article number | 4512068 |
| Pages (from-to) | 244-247 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Semiconductor Manufacturing |
| Volume | 21 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 May 2008 |
Keywords
- Contact
- Gate
- Leakage current
- Test structure
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Cite this
King, M. C., & Chin, A. (2008). New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies. IEEE Transactions on Semiconductor Manufacturing, 21(2), 244-247. [4512068]. https://doi.org/10.1109/TSM.2008.2000267