Abstract
The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.
Original language | English |
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Article number | 4512068 |
Pages (from-to) | 244-247 |
Number of pages | 4 |
Journal | IEEE Transactions on Semiconductor Manufacturing |
Volume | 21 |
Issue number | 2 |
DOIs | |
State | Published - 1 May 2008 |
Keywords
- Contact
- Gate
- Leakage current
- Test structure