New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Ming Chu King*, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.

Original languageEnglish
Article number4512068
Pages (from-to)244-247
Number of pages4
JournalIEEE Transactions on Semiconductor Manufacturing
Volume21
Issue number2
DOIs
StatePublished - 1 May 2008

Keywords

  • Contact
  • Gate
  • Leakage current
  • Test structure

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