New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

Ta-Hui Wang; L. P. Chiang; T. E. Chang; N. K. Zous; K. Y. Shen; C. Huang

doi:10.1109/RELPHY.1997.584276

New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

Ta-Hui Wang^*, L. P. Chiang, T. E. Chang, N. K. Zous, K. Y. Shen, C. Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured.

Original language	English
Pages (from-to)	292-295
Number of pages	4
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/RELPHY.1997.584276
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA Duration: 8 Apr 1997 → 10 Apr 1997

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title = "New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET",

abstract = "We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured.",

author = "Ta-Hui Wang and Chiang, {L. P.} and Chang, {T. E.} and Zous, {N. K.} and Shen, {K. Y.} and C. Huang",

year = "1997",

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doi = "10.1109/RELPHY.1997.584276",

language = "English",

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T1 - New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

AU - Wang, Ta-Hui

AU - Chiang, L. P.

AU - Chang, T. E.

AU - Zous, N. K.

AU - Shen, K. Y.

AU - Huang, C.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured.

AB - We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured.

UR - http://www.scopus.com/inward/record.url?scp=0030681984&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.1997.584276

DO - 10.1109/RELPHY.1997.584276

M3 - Conference article

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SP - 292

EP - 295

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

Y2 - 8 April 1997 through 10 April 1997

ER -

New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

Abstract

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