New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

Ta-Hui Wang*, L. P. Chiang, T. E. Chang, N. K. Zous, K. Y. Shen, C. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured.

Original languageEnglish
Pages (from-to)292-295
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA
Duration: 8 Apr 199710 Apr 1997

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