New structure of dual-material gate approach to suppress random-dopantinduced characteristic fluctuation in 16 nm metal-oxide- semiconductor field-effect-transistor devices

Hsin Wen Su, Hui Wen Cheng, Yiming Li*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this work, we for the first time explore the dual-material gate (DMG), inverse DMG devices and the optimization of DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field effect transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices and structure optimization are observed and discussed. The results show that an optimized DMG device with 60% higher workfunction and 40% lower workfunction in gate area ratio has the best performance to suppress the fluctuation, compared to known DMG devices. The achieved structure exhibits 30.2%, 20% and 9.8% improvements in suppressing threshold voltage, on-state current, and off-state current fluctuations, respectively. Therefore, adjusting the ratio between higher and lower workfunction materials of DMG devices can achieve good immunity to characteristic fluctuation of 16-nm MOSFET devices.

Original languageEnglish
Pages (from-to)291-297
Number of pages7
JournalInternational Journal of Electrical Engineering
Volume18
Issue number6
StatePublished - Dec 2011

Keywords

  • 3d device simulation
  • Device characteristics
  • Dual material gate
  • Metal gate
  • MOSFETs
  • Quasi-Planar
  • Ratio of workfunction

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