A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film

Kow-Ming Chang*, Chii Horng Li, Bao Sheng Sheih, Ji Yi Yang, Shih Wei Wang, Ta Hsun Yeh

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this work, a textured Si surface was formed with a new simple and reliable method for tunnel oxide fabrication. First, a thin poly-Si layer (12 nm thick) was deposited on Si surface and a 30-nm thick dry oxide film was then grown in O2 ambient. This oxide film was served as a sacrificial oxide. The poly-Si film and Si substrate were both oxidized during thermal oxidization. After stripping this sacrificial oxide, a textured Si surface was obtained. Tunnel oxide grown on this textured Si surface has an asymmetrical J-E characteristics, less interface states generation and better reliability (larger Qbd) as compared to those of normal oxide.

Original languageEnglish
Pages (from-to)145-147
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number5
DOIs
StatePublished - 1 May 1998

Keywords

  • Nonvolatile memory devices
  • Textured Si surface

Fingerprint Dive into the research topics of 'A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film'. Together they form a unique fingerprint.

  • Cite this