New short-channel effects on nitrided oxide gate MOSFETs

H. S. Momose*, T. Morimoto, S. Takagi, K. Yamabe, S. Onga, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

New short channel effects with nitride-oxide gate MOSFETs were found, where threshold voltage reduction occurs in a relatively long channel region. These effects would be explained by trapped charges or interface states induced by the mechanical stress at the Si and the nitride-oxide gate film in the course of the heat process.

Original languageEnglish
Title of host publicationESSDERC 1990 - 20th European Solid State Device Research Conference
EditorsW. Eccleston, P. J. Rosser
PublisherIEEE Computer Society
Pages149-152
Number of pages4
ISBN (Electronic)0750300655
StatePublished - 1990
Event20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom
Duration: 10 Sep 199013 Sep 1990

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference20th European Solid State Device Research Conference, ESSDERC 1990
CountryUnited Kingdom
CityNottingham
Period10/09/9013/09/90

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