We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.
|Title of host publication||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010|
|Number of pages||3|
|State||Published - May 2010|
|Name||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010|