New peculiarities of interband tunneling in broken-gap heterostructures

A. Zakharova*, Shun-Tung Yen, K. A. Chao

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.

Original languageEnglish
Pages (from-to)392-401
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5401
DOIs
StatePublished - 18 Aug 2004
EventMicro- and Nanoelectronics 2003 - Zvenigorod, Russian Federation
Duration: 6 Oct 200310 Oct 2003

Keywords

  • Broken-gap heterostructures
  • Lattice-mismatched strain
  • Tunneling

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