Pentacene patterning on aluminum nitride (AIN) dielectric by adjusting the surface energy was discussed. By using conventional photo resist to protect the channel area, the surface energy of the remaining area was altered by the O 2 plasma treatment. Then, after pentacene deposition, water dipping was used to remove the pentacene on O2 plasma-treated area. The adhesion energy, intrusion energy were analyzed to explain the mechanism of this patterning process. The variation of intrusion energy due to different surface energies was found to be the key issue for successful pentacene patterning. AIN-OTFTs with the proposed pentacene patterning technology were also demonstrated.