New patterning method for pentacene-based OTFTs by using AIN dielectric and O2 plasma treatment

Hsiao-Wen Zan, Ting Yuan Tu, Cheng Wei Chou, Kuo Hsi Yen, Chung Hwa Wang, Jenn Chang Hwang, Chen Chou Hsu, Kun Chih Lin, F. Y. Gan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Pentacene patterning on aluminum nitride (AIN) dielectric by adjusting the surface energy was discussed. By using conventional photo resist to protect the channel area, the surface energy of the remaining area was altered by the O 2 plasma treatment. Then, after pentacene deposition, water dipping was used to remove the pentacene on O2 plasma-treated area. The adhesion energy, intrusion energy were analyzed to explain the mechanism of this patterning process. The variation of intrusion energy due to different surface energies was found to be the key issue for successful pentacene patterning. AIN-OTFTs with the proposed pentacene patterning technology were also demonstrated.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages739-742
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

Keywords

  • AIN
  • Contact angle
  • High-k
  • OTFTs
  • Pentacene
  • Sputtering
  • Surface energy

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