A patterning method for pentacene film is proposed. This method was realized self-assembled layer (SAM) and ultra-violet (UV) light post-exposure. The surface characteristic on the gate dielectric is controlled. The difference of the interfacial binding energy between the pentacene film and the dielectric enables the pentacene film to be removed selectively. The remaining pentacene film was fabricated as a top-contact OTFT to confirm the practicability of this technology. The performance kept favorable and superior to that of the control sample. The mobility, the on/off current ratio and the sub-threshold swing were also improved.
|Number of pages||3|
|Journal||SID Conference Record of the International Display Research Conference|
|State||Published - 1 Dec 2006|
|Event||SID 26th International Display Research Conference - Kent, OH, United States|
Duration: 18 Sep 2006 → 21 Sep 2006