New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Yu Cao*, Takashi Sato, Michael Orshansky, Dennis Sylvester, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

429 Scopus citations

Abstract

A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input Leff, Tox, Vt, Rdsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with Leff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 Jan 2000
EventCICC 2000: 22nd Annual Custom Integrated Circuits Conference - Orlando, FL, USA
Duration: 21 May 200024 May 2000

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