New oxide damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles

Steve S. Chung*, C. M. Yih, S. M. Cheng, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

A new and simple method which allows the profiling of both interface states and oxide charge generated during either programming or erase for Flash memory cells is presented. Degradation of Flash memory cell after programming/erase (P/E) cycles due to the oxide damages are identified. The interface state dominated the device degradation during programming while the oxide trap charge dominated the cell performance during source-side F-N erase operation.

Original languageEnglish
Pages (from-to)111-112
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 10 Jun 199712 Jun 1997

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