A new and simple method which allows the profiling of both interface states and oxide charge generated during either programming or erase for Flash memory cells is presented. Degradation of Flash memory cell after programming/erase (P/E) cycles due to the oxide damages are identified. The interface state dominated the device degradation during programming while the oxide trap charge dominated the cell performance during source-side F-N erase operation.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 10 Jun 1997 → 12 Jun 1997