New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI reliabilities for 65nm node CMOS devices and beyond

Steve S. Chung, D. C. Huang, Y. J. Tsai, C. S. Lai, C. H. Tsai, P. W. Liu, Y. H. Lin, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

In this paper, new observations on the uniaxial and biaxial strain-induced hot carrier reliability and/or NBTI in nMOSFET and pMOSFET respectively have been reported for the first time. Uniaxial and biaxial strained nMOSFET and pMOSFET have been extensively examined. Different mechanisms are responsible for different strains in nMOSFET and pMOSFET. For the nMOFETs, it was found that uniaxial strain device has comparable HC reliability with the control device, while biaxial SiGe-strained device exhibits a much worse reliability. This is related to a large impact ionization rate in a biaxial strain which leads to a much worse reliability. For the pMOSFETs, either uniaxial or biaxial strained device shows a comparable amount of HC degradation, while SiGe S/D strained structure might be better considering process complexity, performance, and reliability. Although NBTI is still a great concern in SiGe S/D devices, embedded SiGe S/D technique can improve greatly the device NBTI reliability. These results provide a valuable guideline for the present 65nm and beyond CMOS device design with focus on the strain engineering.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - 1 Dec 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 10 Dec 200613 Dec 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period10/12/0613/12/06

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