New observations on the regular and irregular noise behavior in a resistance random access memory

Scott C.H. Chen, Y. J. Huang, Steve S. Chung, H. Y. Lee, Y. S. Chen, F. T. Chen, P. Y. Gu, M. J. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

In this paper, a new type of noise, different from the conventional Random Telegraph Noise (RTN), has been found and analyzed in a resistance random access memory (RRAM). The regular RTN signal is governed by the trapping and detrapping of the electrons. It will appear regularly with a two-level current and the amplitude of the RTN is smaller. However, an abnormal noise, called giant noise, was observed from the oxygen migration. The amplitude of the giant noise is much larger than the RTN one. Also, two different types of giant noise were observed depending on the movement of the oxygen vacancies. All of the above various types of noise might play an important role in the readout error in an RRAM. Therefore, these noise effects need further attention in the design of RRAM.

Original languageEnglish
Title of host publication2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages94-98
Number of pages5
ISBN (Electronic)9781479973088
DOIs
StatePublished - 1 Jan 2014
Event2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 - South Lake Tahoe, United States
Duration: 12 Oct 201416 Oct 2014

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2015-February

Conference

Conference2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
CountryUnited States
CitySouth Lake Tahoe
Period12/10/1416/10/14

Keywords

  • Multi-level Operation
  • RRAM
  • Random Telegraph Noise
  • Resistive Switching Mechanism
  • Soft-breakdown

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    Chen, S. C. H., Huang, Y. J., Chung, S. S., Lee, H. Y., Chen, Y. S., Chen, F. T., Gu, P. Y., & Tsai, M. J. (2014). New observations on the regular and irregular noise behavior in a resistance random access memory. In 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 (pp. 94-98). [7049519] (IEEE International Integrated Reliability Workshop Final Report; Vol. 2015-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2014.7049519