New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

Yen Kai Lin*, Pragya Kushwaha, Juan Pablo Duarte, Huan Lin Chang, Harshit Agarwal, Sourabh Khandelwal, Angada B. Sachid, Michael Harter, Josef Watts, Yogesh Singh Chauhan, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Anomalous transconductance with nonmono-tonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.

Original languageEnglish
Article number8245878
Pages (from-to)463-469
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - 1 Feb 2018


  • fully depleted silicon-on-insulator (FDSOI)
  • gate oxide
  • image sensor
  • mobility
  • transconductance

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