New method to analyze the shift of floating gate charge and generated tunnel oxide trapped charge profile in NAND flash memory by program/erase endurance

Shirota Riichiro, Bo Jun Yang, Yung Yueh Chiu, Hsuan Tse Chen, Seng Fei Ng, Pin Yao Wang, Jung Ho Chang, Ikuo Kurachi

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A new test system was devised and used to separate the amount of floating gate (FG) charge (QFG) from the oxide trapped charge (QOX) generated by program-and-erase (P/E) cycles. We also extracted the pure Vmid shift caused by the generation of QOX, which is separated from the part of Vt shift coming from QFG deviation. The identification of QFG and Vmid shift makes it possible to analyze the detailed the oxide trapped charge profile. The QFG shift generated by P/E cycles displays asymmetry between the programmed and erased states: the absolute value of QFG exhibits a maximum at ∼ 100 cycles in the programmed states, while QFG monotonically decreases in the erased one. Considering that the Fowler-Nordheim tunneling current is sensitive to the oxide trap near the cathode, itself the source of electron tunneling current, our results indicate that the hole trap is dominant near to Si, whereas the electron trap is dominant near FG.

Original languageEnglish
Article number6951431
Pages (from-to)114-120
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number1
DOIs
StatePublished - 1 Jan 2015

Keywords

  • Endurance
  • Flash memory
  • reliability
  • Trap.

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