New method of Plasma doping with in-situ Helium pre-amorphization

Y. Sasaki; C. G. Jin; K. Okashita; H. Tamura; H. Ito; B. Mizuno; H. Sauddin; R. Higaki; T. Satoh; K. Majima; Y. Fukagawa; K. Takagi; I. Aiba; S. Ohmi; K. Tsutsui; H. Iwai

doi:10.1016/j.nimb.2005.04.109

New method of Plasma doping with in-situ Helium pre-amorphization

Y. Sasaki^*, C. G. Jin, K. Okashita, H. Tamura, H. Ito, B. Mizuno, H. Sauddin, R. Higaki, T. Satoh, K. Majima, Y. Fukagawa, K. Takagi, I. Aiba, S. Ohmi, K. Tsutsui, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article

17 Scopus citations

Abstract

A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance (R_s) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth (X_j) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high activation of the dopant species. The feasibility of this new technique to form ultra-shallow p+-n junction was studied by using spike rapid thermal annealing (RTA) and flash lamp annealing (FLA). Excellent results on R_s, X_j, abruptness of profiles and reverse-biased leakage current of p+-n diode were obtained. The thickness control and the uniformity of the amorphous Si layer in the He-PA process were discussed.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	237
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.04.109
State	Published - Aug 2005
Event	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - Duration: 25 Oct 2004 → 27 Oct 2004

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Sasaki, Y., Jin, C. G., Okashita, K., Tamura, H., Ito, H., Mizuno, B., Sauddin, H., Higaki, R., Satoh, T., Majima, K., Fukagawa, Y., Takagi, K., Aiba, I., Ohmi, S., Tsutsui, K., & Iwai, H. (2005). New method of Plasma doping with in-situ Helium pre-amorphization. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237(1-2), 41-45. https://doi.org/10.1016/j.nimb.2005.04.109

Sasaki, Y. ; Jin, C. G. ; Okashita, K. ; Tamura, H. ; Ito, H. ; Mizuno, B. ; Sauddin, H. ; Higaki, R. ; Satoh, T. ; Majima, K. ; Fukagawa, Y. ; Takagi, K. ; Aiba, I. ; Ohmi, S. ; Tsutsui, K. ; Iwai, H. / New method of Plasma doping with in-situ Helium pre-amorphization. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2005 ; Vol. 237, No. 1-2. pp. 41-45.

@article{a5826573160842e68ead928490192676,

title = "New method of Plasma doping with in-situ Helium pre-amorphization",

abstract = "A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance (Rs) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth (Xj) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high activation of the dopant species. The feasibility of this new technique to form ultra-shallow p+-n junction was studied by using spike rapid thermal annealing (RTA) and flash lamp annealing (FLA). Excellent results on Rs, Xj, abruptness of profiles and reverse-biased leakage current of p+-n diode were obtained. The thickness control and the uniformity of the amorphous Si layer in the He-PA process were discussed.",

author = "Y. Sasaki and Jin, {C. G.} and K. Okashita and H. Tamura and H. Ito and B. Mizuno and H. Sauddin and R. Higaki and T. Satoh and K. Majima and Y. Fukagawa and K. Takagi and I. Aiba and S. Ohmi and K. Tsutsui and H. Iwai",

year = "2005",

month = aug,

doi = "10.1016/j.nimb.2005.04.109",

language = "English",

volume = "237",

pages = "41--45",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-2",

note = "null ; Conference date: 25-10-2004 Through 27-10-2004",

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Sasaki, Y, Jin, CG, Okashita, K, Tamura, H, Ito, H, Mizuno, B, Sauddin, H, Higaki, R, Satoh, T, Majima, K, Fukagawa, Y, Takagi, K, Aiba, I, Ohmi, S, Tsutsui, K & Iwai, H 2005, 'New method of Plasma doping with in-situ Helium pre-amorphization', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 237, no. 1-2, pp. 41-45. https://doi.org/10.1016/j.nimb.2005.04.109

New method of Plasma doping with in-situ Helium pre-amorphization. / Sasaki, Y.; Jin, C. G.; Okashita, K.; Tamura, H.; Ito, H.; Mizuno, B.; Sauddin, H.; Higaki, R.; Satoh, T.; Majima, K.; Fukagawa, Y.; Takagi, K.; Aiba, I.; Ohmi, S.; Tsutsui, K.; Iwai, H.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2, 08.2005, p. 41-45.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - New method of Plasma doping with in-situ Helium pre-amorphization

AU - Sasaki, Y.

AU - Jin, C. G.

AU - Okashita, K.

AU - Tamura, H.

AU - Ito, H.

AU - Mizuno, B.

AU - Sauddin, H.

AU - Higaki, R.

AU - Satoh, T.

AU - Majima, K.

AU - Fukagawa, Y.

AU - Takagi, K.

AU - Aiba, I.

AU - Ohmi, S.

AU - Tsutsui, K.

AU - Iwai, H.

PY - 2005/8

Y1 - 2005/8

N2 - A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance (Rs) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth (Xj) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high activation of the dopant species. The feasibility of this new technique to form ultra-shallow p+-n junction was studied by using spike rapid thermal annealing (RTA) and flash lamp annealing (FLA). Excellent results on Rs, Xj, abruptness of profiles and reverse-biased leakage current of p+-n diode were obtained. The thickness control and the uniformity of the amorphous Si layer in the He-PA process were discussed.

AB - A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance (Rs) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth (Xj) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high activation of the dopant species. The feasibility of this new technique to form ultra-shallow p+-n junction was studied by using spike rapid thermal annealing (RTA) and flash lamp annealing (FLA). Excellent results on Rs, Xj, abruptness of profiles and reverse-biased leakage current of p+-n diode were obtained. The thickness control and the uniformity of the amorphous Si layer in the He-PA process were discussed.

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DO - 10.1016/j.nimb.2005.04.109

M3 - Conference article

AN - SCOPUS:23444440176

VL - 237

SP - 41

EP - 45

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

Y2 - 25 October 2004 through 27 October 2004

ER -