TY - JOUR
T1 - New method of Plasma doping with in-situ Helium pre-amorphization
AU - Sasaki, Y.
AU - Jin, C. G.
AU - Okashita, K.
AU - Tamura, H.
AU - Ito, H.
AU - Mizuno, B.
AU - Sauddin, H.
AU - Higaki, R.
AU - Satoh, T.
AU - Majima, K.
AU - Fukagawa, Y.
AU - Takagi, K.
AU - Aiba, I.
AU - Ohmi, S.
AU - Tsutsui, K.
AU - Iwai, H.
PY - 2005/8
Y1 - 2005/8
N2 - A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance (Rs) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth (Xj) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high activation of the dopant species. The feasibility of this new technique to form ultra-shallow p+-n junction was studied by using spike rapid thermal annealing (RTA) and flash lamp annealing (FLA). Excellent results on Rs, Xj, abruptness of profiles and reverse-biased leakage current of p+-n diode were obtained. The thickness control and the uniformity of the amorphous Si layer in the He-PA process were discussed.
AB - A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance (Rs) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth (Xj) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high activation of the dopant species. The feasibility of this new technique to form ultra-shallow p+-n junction was studied by using spike rapid thermal annealing (RTA) and flash lamp annealing (FLA). Excellent results on Rs, Xj, abruptness of profiles and reverse-biased leakage current of p+-n diode were obtained. The thickness control and the uniformity of the amorphous Si layer in the He-PA process were discussed.
UR - http://www.scopus.com/inward/record.url?scp=23444440176&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2005.04.109
DO - 10.1016/j.nimb.2005.04.109
M3 - Conference article
AN - SCOPUS:23444440176
VL - 237
SP - 41
EP - 45
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
Y2 - 25 October 2004 through 27 October 2004
ER -