New insights into breakdown modes and their evolution in ultra-thin gate oxide

Horng-Chih Lin, D. Y. Lee, C. Y. Lee, Tien-Sheng Chao, T. Y. Huang, Ta-Hui Wang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
StatePublished - 1 Jan 2001

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