NEW INJECTION SUPPRESSION STRUCTURE FOR CONDUCTIVITY MODULATED POWER MOSFETs.

Daisuke Ueda*, Kazuyoshi Kitamura, Hiromitsu Takagi, Gota Kano

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

A new device suited for suppression of the minority carrier injection in the conductivity modulated power MOSFET is presented. The new structure is featured by the presence of the n** plus -ring region at the chip peripheral that is electrically connected to the bottom p** plus -drain region. This permits the suppression of excessive carrier injection into the epitaxial-buffer region due to the lowered forward bias to the base of integral PNP transistor. An experimentally fabricated device exhibited an improvement of the switching time by more than two.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages97-100
Number of pages4
ISBN (Print)493081314X
DOIs
StatePublished - 1 Dec 1986

Publication series

NameConference on Solid State Devices and Materials

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