@inproceedings{b3e8a049befe4f628154a8e470baa19e,
title = "New industry standard FinFET compact model for future technology nodes",
abstract = "A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III-V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.",
keywords = "BSIM-CMG, Compact Models, SPICE models",
author = "Sourabh Khandelwal and Duarte, {Juan P.} and Aditya Medury and Chauhan, {Y. S.} and Chen-Ming Hu",
year = "2015",
month = aug,
day = "25",
doi = "10.1109/VLSIT.2015.7223704",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T62--T63",
booktitle = "2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers",
address = "United States",
note = "null ; Conference date: 16-06-2015 Through 18-06-2015",
}