NEW GaSb/AISb/GaSb/AISb/InAs/AISb/InAs Triple-Barrier Interband Tunnelling Diode

L. Yang, Jenn-Fang Chen, A. Y. Cho

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7-2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.

Original languageEnglish
Pages (from-to)1277-1279
Number of pages3
JournalElectronics Letters
Volume26
Issue number16
DOIs
StatePublished - 1 Sep 1990

Keywords

  • Negative resistance
  • Semiconductor devices and materials
  • Tunnel diodes

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