New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

Original languageEnglish
Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages327-330
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
Duration: 14 Sep 200918 Sep 2009

Publication series

NameESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference39th European Solid-State Device Research Conference, ESSDERC 2009
CountryGreece
CityAthens
Period14/09/0918/09/09

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