New developments in schottky source/drain high-k/metal gate CMOS transistors

Ming Fu Li, Sungjoo Lee, Shiyang Zhu, Rui Li, Jingde Chen, Albert Chin, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Recent developments in Schottky source/drain high-k/metal gate CMOS transistors (SSDT) will be presented. Bulk SSDTs with 1.5-2 nm HfO2(or HfAlO) gate dielectric and HfN/TaN metal gate have been fabricated using a novel low temperature process. The Si N-SSDT using YbSi2-xsilicide, due to the lower Schottky electron barrier of YbSi2-x/Si, has demonstrated a record high Ion/Ioffratio of ~107and a steep subthreshold slope of 75 mV/dec. For P-SSDT, the Si SSDT using PtSi silicide S/D shows excellent Ion/Ioffof ~ 107- 108and subthreshold slope of ~ 66 mV/dec, while the Ge SSDT using NiGe S/D shows Ion~ 5 times larger than that of the Si counterpart with PtSi S/D, due to the lower hole Schottky barrier and the higher hole mobility of Ge channel. The implant-free low temperature process relaxes the thermal budget of high-k dielectric and metal gate Fermi pinning. More improved performances are expected by using ultra-thin-body (UTB) SOI or GOI structures, showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology.

Original languageEnglish
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages336-345
Number of pages10
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - 1 Jan 2011

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